date:Feb 28, 2012
is powered by drawing energy from the electro-magnetic field generated by the reader.
It uses a complementary hybrid organic-oxide technology, combining a 250C solution-processed n-type metal-oxide TFT with typical charge carrier mobility of 2cm2/Vs with a pentacene p-type TFT with mobility of up to 1cm2/Vs. A high-k Al2O3 dielectric was used, which increases the transistors' current drive, said Imec.
Low cost
The development paves the way for low-temperature thin film transistors (TFT) RFID